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Abstract 2D materials have been of considerable interest as new materials for device applications. Non‐volatile resistive switching applications of MoS₂and WS₂have been previously demonstrated; however, these applications are dramatically limited by high temperatures and extended times needed for the large‐area synthesis of 2D materials on crystalline substrates. The experimental results demonstrate a one‐step sulfurization method to synthesize MoS₂and WS₂at 550 °C in 15 min on sapphire wafers. Furthermore, a large area transfer of the synthesized thin films to SiO₂/Si substrates is achieved. Following this, MoS₂and WS₂memristors are fabricated that exhibit stable non‐volatile switching and a satisfactory large on/off current ratio (10³–10⁵) with good uniformity. Tuning the sulfurization parameters (temperature and metal precursor thickness) is found to be a straightforward and effective strategy to improve the performance of the memristors. The demonstration of large‐scale MoS₂and WS₂memristors with a one‐step low‐temperature sulfurization method with simple strategy to tuning can lead to potential applications such as flexible memory and neuromorphic computing.